Epitaxial growth is the growth of a thin film as a single crystal, the
properties of which are determined by those of the underlying substrate.
Because of the high quality of the resulting thin film, epitaxial growth is
the method of choice for many of the most demanding applications, such as
quantum well devices. The morphology of an epitaxial surface can have a
significant effect on device performance. This talk will survey
mathematical models and simulation methods for epitaxial growth, at both
the atomistic and continuum scales. Particular emphasis will be placed on
interface dynamics.
Copyright. All Rights Reserved.