This talk will describe a new approach to simulation of epitaxial growth with strain. An island dynamics model with a level s
et numerical method is used for the growth; a lattice statics model is used for the strain. The model is partly atomistic in
order to properly treat atomistic scale variation of the strain field at a step, but partly continuum in order to reduce its
computational complexity. Computational and analytic results, as well as comparison to previous methods, will be
presented.
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