Abstract
Simulation for Epitaxial Growth with Strain
Russel Caflisch
New York University
This talk will describe a new approach to simulation of epitaxial growth with strain. An island dynamics model with a level s
et numerical method is used for the growth; a lattice statics model is used for the strain. The model is partly atomistic in
order to properly treat atomistic scale variation of the strain field at a step, but partly continuum in order to reduce its
computational complexity. Computational and analytic results, as well as comparison to previous methods, will be
presented.
et numerical method is used for the growth; a lattice statics model is used for the strain. The model is partly atomistic in
order to properly treat atomistic scale variation of the strain field at a step, but partly continuum in order to reduce its
computational complexity. Computational and analytic results, as well as comparison to previous methods, will be
presented.
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