We present a coupled Pseudo Empirical Method calculation to a Boltzmann tranport flow for electron-phonon interactions approximated by Fermi's Golden Rule in nano-scale semiconductor devices. This approach has the advantage that makes corrections to classical electronic transport along predetermined energy surfaces given by approximated formulas. We also discuss approximations to scattering probabilities for inter and intra band scattering beyond Fermi's Golden rule. We show simulations for Si devices.
Back to Workshop IV: Energy Conservation and Waste Heat Recovery