Transport thermalization by electron-phonon interactions in nano scale devices

Irene Gamba
University of Texas at Austin

We present a coupled Pseudo Empirical Method calculation to a Boltzmann tranport flow for electron-phonon interactions approximated by Fermi's Golden Rule in nano-scale semiconductor devices. This approach has the advantage that makes corrections to classical electronic transport along predetermined energy surfaces given by approximated formulas. We also discuss approximations to scattering probabilities for inter and intra band scattering beyond Fermi's Golden rule. We show simulations for Si devices.

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