Defects in SiC: Electronic structure, spin control, and spin-photon interfaces

Sophia Economou
Virginia Tech

Color center defects in solids are attractive candidates for quantum information processing. The most well-known example is the NV center in diamond; remote heralded entanglement has been demonstrated between two NV centers, and a few-qubit quantum processor based on a single center and its neighboring nuclear spins has also been developed. Despite its many successes, there are challenges with this defect. As a result, the community is in the quest for alternative defects with desirable properties. Silicon carbide (SiC) has emerged as a technologically viable material for quantum technologies. It hosts defects that can be exploited both for spin-based and photonics applications. I will present our work on the silicon vacancy defect in SiC, including electronic structure of the multi-electron spin states, as well as spin polarization and control. These results enable the design of spin-photon interfaces that can be used to generate highly entangled ‘graph’ states of photons, which are crucial for applications in quantum computation, communication, and sensing.

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